High figure-of-merit for ZnO nanostructures by interfacing lowly-oxidized graphene quantum dots

Authors
Choi, MyungwooAn, JuyoungLee, HyejeongJang, HanhwiPark, Ji HongCho, DonghwiSong, Jae YongKim, Seung MinOh, Min-WookShin, HosunJeon, Seokwoo
Issue Date
2024-03
Publisher
Nature Publishing Group
Citation
Nature Communications, v.15, no.1
Abstract
Thermoelectric technology has potential for converting waste heat into electricity. Although traditional thermoelectric materials exhibit extremely high thermoelectric performances, their scarcity and toxicity limit their applications. Zinc oxide (ZnO) emerges as a promising alternative owing to its high thermal stability and relatively high Seebeck coefficient, while also being earth-abundant and nontoxic. However, its high thermal conductivity (>40 W m(-1)K(-1)) remains a challenge. In this study, we use a multi-step strategy to achieve a significantly high dimensionless figure-of-merit (zT) value of approximately 0.486 at 580 K (estimated value) by interfacing graphene quantum dots with 3D nanostructured ZnO. Here, we show the fabrication of graphene quantum dots interfaced 3D ZnO, yielding the highest zT value ever reported for ZnO counterparts; specifically, our experimental results indicate that the fabricated 3D GQD@ZnO exhibited a significantly low thermal conductivity of 0.785 W m(-1)K(-1) (estimated value) and a remarkably high Seebeck coefficient of -556 mu V K-1 at 580 K.
Keywords
AL-DOPED ZNO; THERMOELECTRIC PROPERTIES; THERMAL-CONDUCTIVITY; PHONON-SCATTERING; POWER-GENERATION; CARRIER MOBILITY; OXIDE; ENHANCEMENT; TEMPERATURE; PERFORMANCE
URI
https://pubs.kist.re.kr/handle/201004/149789
DOI
10.1038/s41467-024-46182-2
Appears in Collections:
KIST Article > 2024
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