Influence of intentionally strained sapphire substrate on GaN epilayers

Title
Influence of intentionally strained sapphire substrate on GaN epilayers
Authors
김재균박용주변동진진정근강민구고의관문영부민석기
Keywords
GaN; ion implantation; tensile-strained sapphire; MOCVD
Issue Date
2003-06
Publisher
Jpn. J. Appl. Phys. Part 1
Citation
VOL 42, NO 6B, 3991-3994
URI
http://pubs.kist.re.kr/handle/201004/14981
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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