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dc.contributor.author박전웅-
dc.contributor.author김익수-
dc.contributor.author김성일-
dc.contributor.author김용태-
dc.contributor.author성만영-
dc.date.accessioned2015-12-02T05:15:17Z-
dc.date.available2015-12-02T05:15:17Z-
dc.date.issued200306-
dc.identifier.citationVOL 10, NO 2, 49-54-
dc.identifier.issn1226-9360-
dc.identifier.other17987-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/14998-
dc.publisher마이크로전자 및 패키징학회지-
dc.publisherJournal of Microelectronics and Packaging Society-
dc.subjecthydrogen annealing-
dc.subjectBi-layered perovskite-
dc.subjectinterface trap-
dc.titleHydrogen degradation of Pt/SBT/Si, Pt/SBT/Pt ferroelectric gate structures and degradation resistance of Ir gate electrode-
dc.typeArticle-
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