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dc.contributor.author노영수-
dc.contributor.authorS. Charrerjee-
dc.contributor.authorS. Nandi-
dc.contributor.authorS.K. Samanta-
dc.contributor.authorC.K. Maiti-
dc.contributor.authorS. Maikap-
dc.contributor.author최원국-
dc.date.accessioned2015-12-02T05:16:03Z-
dc.date.available2015-12-02T05:16:03Z-
dc.date.issued200304-
dc.identifier.citationv. 66, 637-642-
dc.identifier.issn0167-9317-
dc.identifier.other17534-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/15163-
dc.publisherMicroelectronic Engineering-
dc.subjectMIS capacitor-
dc.titleCharacteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si-
dc.typeArticle-
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