Single electron tunneling effects in a heavily doped n+ GaAs quantum dot

Title
Single electron tunneling effects in a heavily doped n+ GaAs quantum dot
Authors
B.H.ChoiS.H.SonK.H.ChoS.W.HwangD.AhnY.M.Park박용주E.K.Kim
Issue Date
2002-07
Publisher
26th International conference on physcis of semiconductor
Citation
, 247-247
URI
http://pubs.kist.re.kr/handle/201004/15533
Appears in Collections:
KIST Publication > Conference Paper
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