Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric semiconductor and metal-ferroelectric-insulator-semiconductor gate structures

Title
Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric semiconductor and metal-ferroelectric-insulator-semiconductor gate structures
Authors
이성균김용태김성일이철의
Keywords
memory windows
Issue Date
2002-06
Publisher
Journal of Applied Physics
Citation
VOL 91, NO 11, 9303-9307
URI
http://pubs.kist.re.kr/handle/201004/15615
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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