Implantation of N ions on sapphire substrate for improvement of GaN epilayer

Title
Implantation of N ions on sapphire substrate for improvement of GaN epilayer
Authors
조용석진정근박용주조성찬고의관김은규김긍호변동진민석기
Keywords
GaN
Issue Date
2002-06
Publisher
Japanese Journal of Applied Physics, Part 1
Citation
VOL 41, NO 6B, 4267-4270
URI
http://pubs.kist.re.kr/handle/201004/15627
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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