MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl₃:tBuNH₂

Title
MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl₃:tBuNH₂
Authors
주오심정광덕조성훈경제홍안창규최승철동영관윤호섭한성환
Keywords
aluminum nitride; MOCVD; precursor
Issue Date
2002-12
Publisher
Chemical Vapor Deposition
Citation
v. 8, no. 6, 273-276
URI
http://pubs.kist.re.kr/handle/201004/15939
ISSN
0948-1907
Appears in Collections:
KIST Publication > Article
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