Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation

Title
Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation
Authors
H. J. KimS. H. LeeJ. JoY. Nishihara박용주
Keywords
electron irradiation; silicon power devices; hydrogen annealing; minority carrier lifetime
Issue Date
2002-10
Publisher
Physica Scripta
Citation
VOL T101, 203-206
URI
http://pubs.kist.re.kr/handle/201004/16086
ISSN
0281-1847
Appears in Collections:
KIST Publication > Article
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