A consideration of void formation mechanism at gate edge induced by cobalt silicidation

Title
A consideration of void formation mechanism at gate edge induced by cobalt silicidation
Authors
Yeong-Cheol Kim김기영김병국
Keywords
코발트 실리사이드
Issue Date
2001-09
Publisher
한국결정학회지 (Korean Journal of Crystallography)
Citation
VOL 12, NO 3, 166-170
URI
http://pubs.kist.re.kr/handle/201004/16204
ISSN
12298700
Appears in Collections:
KIST Publication > Article
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