Performance of the W-B-N ternary diffusion barrier for Cu metallization

Title
Performance of the W-B-N ternary diffusion barrier for Cu metallization
Authors
이창우김용태이효석박영균이택홍Q. ChenNevil V. Richardson
Keywords
확산방지망
Issue Date
2001-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 39, NO 6, 1019-1022
Abstract
The thermal stability of rf magnetron sputtered tungsten boron nitride (W-B-N) thin lms has been investigated as a di usion barrier between Cu and Si during subsequent annealing at 550 􀀀 900 C. The boron and the nitrogen impurities in W-B-N thin lms provide a stu ng e ect that is very e ective for preventing the fast di usion of Cu atoms during the high-temperature annealing process. A resistivity is attainable by annealing the Cu/W-B-N/Si thin lms between 3 and 58 -cm from room temperature to 900 C. X-ray di raction, nomarski microscopy, and electrical property analysis show that the W-B-N barriers do not react with Si during an annealing in a N2 ambient at 1000 C for 30 min and prevent interdi usion of Cu atoms at 800 􀀀 850 C for 30 min, which is the best result so far for the thermal stability of a di usion barrier.
URI
http://pubs.kist.re.kr/handle/201004/16703
ISSN
0374-4884
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