RuO ₂ sputtered thin film supercapacitor's performance as function of oxygen incorportion
- RuO ₂ sputtered thin film supercapacitor's performance as function of oxygen incorportion
- 임재홍; 최두진; 조원일; 윤영수
- thin film
- Issue Date
- Journal of the Korean Physical Society
- VOL 39, S382-S384
- The relation of oxygen incorporation of RuO2 lm and Li+ ions is not clear as yet. To nd a
correlation between the capacitance and oxygen contents can provide the insight of mechanism and
the improvement of performance. We sputtered the bottom electrode, RuO2 lm on Pt/TiO2/Si
substrate in di erent oxygen partial pressure. Lipon (lithium phosphorous oxynitride) lm as an
electrolyte was r.f. sputtered on it, and RuO2 lm as a top electrode was deposited on Lipon with
the same procedure of the rst layer. In this work, we studied the e ect of oxygen excess on the
performance of TFSC. All solid-state TFSC was tested with charge-discharge cyclic measurement.
It ran for 200 cycles. As the cycles go on, the capacitance decreases gradually. When oxygen partial
pressure increased during RuO2 lm deposition, the fade of capacitance rised.
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