Low frequency noise in HEMT structure
- Low frequency noise in HEMT structure
- 한일기; 이정일; J. Brini; A. Chovet
- Issue Date
- Journal of the Korean Physical Society
- VOL 39, S322-S326
- A comprehensive model for low frequency excess noise in HEMT structure is presented. The
model includes number
uctuation mechanisms such as thermal activation, tunneling and random
walk involving bulk traps and interface traps. For the gate current noise these traps contribute
to the current
uctuation through barrier height modulation. Gate current
ows through two
Schottky barriers, one at the gate metal and the other near the two-dimensional carrier channel.
Based on di erent noise generation mechanisms for Schottky barrier structure, we developed a
novel and comprehensive model for low frequency noise in the gate current of HEMT structure.
The model explains well the experimental results including the current dependence of the noise
spectral density. The drain current noise is also modeled utilizing these three mechanisms, and the
previously proposed e ective density of traps could be translated into actual bulk trap density and
interface states density. Low frequency noise is important for microwave device performance since
it can be up-converted into the microwave range and dominates the phase noise of oscillators and
mixers. Low frequency noise measurements also can provide a spectroscopy tool for defects involved
and complement others such as DLTS.
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