Effect of rapid thermal anneal on the magnetoresistive properties of magnetic tunnel junction

Title
Effect of rapid thermal anneal on the magnetoresistive properties of magnetic tunnel junction
Authors
이경일이제형이우영이긍원하재근신경호
Keywords
magnetic tunnel junction; tunneling magetoresistance; rapid thermal anneal
Issue Date
2001-12
Publisher
Journal of Magnetics
Citation
VOL 6, NO 4, 126-128
Abstract
The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The runneling magnetoresistance (TMR) in an as-grown MTJ is found to be ~27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300℃, reaching ~46%. A TEM image reveals a structural change in the interface of Al₂O₃ layer for the MTJ annealed by RTA at 300℃. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistance, Rapid thermal anneal
URI
http://pubs.kist.re.kr/handle/201004/16728
ISSN
1226-1750
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KIST Publication > Article
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