Electrical properties of Cobalt contact to p-GaN
- Electrical properties of Cobalt contact to p-GaN
- 김제원; 원종학; 박수영; 김성일; 최인훈
- Issue Date
- Journal of the Korean Physical Society
- VOL 39, S360-S363
- The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere
without intermediate metal were investigated. It was observed that the contact resistance decreased
with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after
RTA at 600 ℃ in the O2/N2 atmosphere. The specific minimum contact resistance was about 10-²
Ω·cm² range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the
O2/N2 was more effective for reducing the contact resistance than the normal furnace annealing.
The reason for the reduction of resistance was expected to be the increase of hole concentration due
to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.
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