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dc.contributor.author김두근-
dc.contributor.author이정준-
dc.contributor.author최영완-
dc.contributor.author이석-
dc.contributor.author강병권-
dc.contributor.author김선호-
dc.date.accessioned2015-12-02T05:25:10Z-
dc.date.available2015-12-02T05:25:10Z-
dc.date.issued200009-
dc.identifier.citationVOL 12, NO 9, 1219-1221-
dc.identifier.issn1041-1135-
dc.identifier.other13464-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/16993-
dc.description.abstractWaveguide-type PnpN depleted optical thyristors operating at 1.55 m are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers. The thyristors show sufficient nonlinear s-shape – characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with = 300 m and 350 m respectively are measured.-
dc.publisherIEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society-
dc.subjectoptical communication system-
dc.subjectwaveguide optical thyristor-
dc.subjectspontaneous emission-
dc.titleWaveguide-Type PnpN optical thyristor operating at 1.55 ㎛-
dc.typeArticle-
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