Characteristics of GaN films grown on the stress-imposed Si(lll)

Title
Characteristics of GaN films grown on the stress-imposed Si(lll)
Authors
고의관박용주김은규박찬수이석헌이정희조성호
Keywords
GaN; Si(lll) substrate; Implantation; buffer-layer; stress
Issue Date
2000-09
Publisher
Materials science & engineering B, Solid-state materials for advanced technology
Citation
VOL 77, NO 3, 268-273
URI
http://pubs.kist.re.kr/handle/201004/17009
ISSN
0921-5107
Appears in Collections:
KIST Publication > Article
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