Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure

Title
Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure
Authors
이희택최원준우덕하김선호조재원
Keywords
quantum well intermixing
Issue Date
2000-09
Publisher
새물리
Citation
VOL 41, NO 3, 193-198
URI
http://pubs.kist.re.kr/handle/201004/17013
ISSN
0374-4914
Appears in Collections:
KIST Publication > Article
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