Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO₂ layers

Title
Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO₂ layers
Authors
Hyo Bae KimTae Gon KimJeong Hun SonChung Nam Whang채근화Won Seog LeeSungil Im송종한
Keywords
Ion implantation; Photoluminescence; Radiative defects; SiO₂
Issue Date
2000-08
Publisher
Journal of applied physics
Citation
VOL 88, NO 4, 1851-1854
URI
http://pubs.kist.re.kr/handle/201004/17042
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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