Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient

Title
Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient
Authors
김익수최재형김용태최인훈
Keywords
YMnO3; ferroelectric gate; memory window
Issue Date
2000-07
Publisher
12th IEEE International Symposium on Applications of Ferroelectrics
Citation
, 47-47
URI
http://pubs.kist.re.kr/handle/201004/17112
Appears in Collections:
KIST Publication > Conference Paper
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