Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer

Title
Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer
Authors
최원준이희택우덕하김선호조재원
Keywords
quantum well intermixing
Issue Date
2000-05
Publisher
새물리
Citation
VOL 40, NO 4, 349-352
URI
http://pubs.kist.re.kr/handle/201004/17214
ISSN
0374-4914
Appears in Collections:
KIST Publication > Article
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