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dc.contributor.author최원준-
dc.contributor.author이희택-
dc.contributor.author우덕하-
dc.contributor.author김선호-
dc.contributor.author조재원-
dc.date.accessioned2015-12-02T05:26:40Z-
dc.date.available2015-12-02T05:26:40Z-
dc.date.issued200005-
dc.identifier.citationVOL 40, NO 4, 349-352-
dc.identifier.issn0374-4914-
dc.identifier.other12943-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/17214-
dc.publisher새물리-
dc.subjectquantum well intermixing-
dc.titleDependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer-
dc.typeArticle-
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