Structure of the quantum well for a broad-band semiconductor optical amplifier

Title
Structure of the quantum well for a broad-band semiconductor optical amplifier
Authors
박윤호강병권이석우덕하김선호
Keywords
optical semiconductor amplifier; bread-band
Issue Date
2000-03
Publisher
Journal of the Korean Physical Society
Citation
VOL 36, NO 4, 206-208
Abstract
For the at-gain characteristics of semiconductor optical ampli ers in the broad range, we used a non-uniform quantum well structure. The at gain in the broad band is made possible by optimizing the variation of the well's thickness. We also showed the gain characteristics for di erent arrangements of the quantum wells from the p or the n side. As expected theoretically, the gain of the broad bandwidth was characterized by using a photoluminescence measurement.
URI
http://pubs.kist.re.kr/handle/201004/17349
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE