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Issue DateTitleAuthor(s)
198701The freqeuncy dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime.이정일; B. B. Goldberg; M. Heiblum; P. J. Stiles
199610Thermal stability of sulfur-treated InP investigated by photoluminescence한일기; 우덕하; 김회종; 김은규; 이정일; 김선호; 강광남; 임한조; 박홍이
199501Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's.김회종; 우덕하; 한일기; 최원준; 이정일; 강광남; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho
199403Enhanced disordering of GaAs/AlGaAs multi quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposition SiN capped layer grown at high RF power conditoin.김용; 최원준; 이정일; 한일기; 강광남; 박홍이; 조규만
200210Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer한일기; 허두창; 최원준; 이정일
199201Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapor deposition.이정일; S. S. Yom; W. N. Kang; Y. S. Yoon; D. J. Choi; T. W. Kim; K. Y. Seo; P. H. Hur; C. Y. Kim
200111Linearized multiple quantum well electro-absorption modulator by quantum well intermixing technique최원준; Woon Sik Kim; 한일기; 박용주; 김은규; 이정일; Jong Chang Yi
199201In0.52Al0.48As 장벽사이에서의 In0.65GaO0.35As/In0.53Ga0.47As 양자우물에서의 부띠에너지와 파동함수의 결정강광남; 이정일; 김태환; 강승언; 이규석
199704Gas source molecular beam epitaxy 를 이용한 GaAs/AlGaAs 다중양자우물 구조의 성장우덕하; 최석근; 김회종; 한일기; 최원준; 이석; 이정일; 김선호; 강광남
200101MODFET의 광반응김회종; 김동명; 한일기; 이정일

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