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Issue DateTitleAuthor(s)
199401Interface and electrical properties of plasma deposited tungsten nitride schottky contacts to GaAs.김용태; 이창우
199801RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices이창우; 고민경; 오환원; 우상록; 윤성로; 김용태; 박영균; 고석중
199101Highly conductive tungsten thin films prepared by the plasma assised silane reduction process.김용태; 민석기; 홍종성; 김충기
199101플라즈마화학증착 텅스텐박막의 특성에 미치는 H//2/WF//6 입력비의 역활 .김용태; 민석기; 홍종성; 강태원; 홍치유
199101Rapid thermal annealing effects on the properties of plasma-enhanced chemical vapor deposited tungsten films.김용태; 민석기; 홍종성; 강태원; 홍치유
199201The effect of diluent gas and rapid thermal annealing on the properties of plasma deposited silicon nitride films.김용태; 민석기; 남철우; 우성일
199601Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor김은규; 손맹호; 이호녕; 김용태; 민석기
199601Study on physical properties of Cu-CVD for ULSI interconnects.김용태; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; 민석기
199803Electrical properties of a W-B-N Schottky contact to GaAs김용태; 이창우; 김동준
200207The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering최훈상; 이종한; 임건식; 강민정; 최인훈; 김용태; 김성일

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