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Issue DateTitleAuthor(s)
200312Experimental and Theoretical Investigation of detection wavelength tuning in quantum well infrared-photodetectors by quantum well intermixing technique황성호; 신재철; 최원준; 한일기; 이정일; 최정우; 한해욱
200312The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200312Quantum dots and wires소대섭; 강상규; 최붕기; 이정일; 임한조
200312Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경
200310Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique김지훈; 박용주; 박영민; 송진동; 신재철; 이정일; 김태환
200306Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO₂ capping layer황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 최정우
200309High performance of 1.54㎛ InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells허두창; 한일기; 이정일; 정지채
200309Maximum power CW 2.45-W 1.55-㎛ InGaAsP laterally tapered laser diodes.허두창; 한일기; 이정일; 정지채
200310Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200310Doping density and operation voltage in qauntum dot IR photodetector이욱현; 강용훈; 엄준호; 홍성철; 이상준; 노삼규; 김문덕; 장유동; 이동한; 이정일