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Issue DateTitleAuthor(s)
199301LPMOCVD 방법에 의한 탄소도핑된 갈륨비소 에피층의 격자 수축 및 임계두께 해석 .김성일; 김무성; 민석기
199301Fabrication of single GaAs substrate by MOCVD.김성일; 민석기; 김용; 김무성; 이민석; 김영덕
199101Modeling for GaAs/AlGaAs buried heterostructure laser diode.김성일; 엄경숙; 민석기
199201Growth of g-Al2O3 thin films on Si by low-pressure metalorganic chemical vapor deposition염상섭; 윤영수; W. N. Kang; J. I. Lee; D. J. Choi; T. W. Kim; K. Y. Seo; P. H. Hur; C. Y. Kim
199201Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.김성일; 민석기; 김용; 김무성; 엄경숙; 김영덕; 이민석
199207Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성; 민석기
200005The synthesis of a suitable single precursor for AIN thin films한성환; 안창규; 경제홍; 조성훈; 최승철
199608Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
198701Theoretical calculations on absorption, emission and gain spectra in AlGaAs active layer of the visible DH laser diode.김성일; 민석기; 엄경숙; 김무성
199401The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.김성일; 민석기; 김용; 김무성

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