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Issue DateTitleAuthor(s)
198712HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).김은규; 조훈영; 박승철; 김용태; 민석기
199702Characteristics of amorphous Ta-Si-N thin film for Cu metallization김동준; 정순필; 김용태; 민석기; 박종완
199501The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.김용태; 민석기; C. S. Kwon; I. H. Choi
199501Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallization김용태; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; 민석기
199101Highly conductive tungsten thin films prepared by the plasma assised silane reduction process.김용태; 민석기; 홍종성; 김충기
199101플라즈마화학증착 텅스텐박막의 특성에 미치는 H//2/WF//6 입력비의 역활 .김용태; 민석기; 홍종성; 강태원; 홍치유
199101Rapid thermal annealing effects on the properties of plasma-enhanced chemical vapor deposited tungsten films.김용태; 민석기; 홍종성; 강태원; 홍치유
199201The effect of diluent gas and rapid thermal annealing on the properties of plasma deposited silicon nitride films.김용태; 민석기; 남철우; 우성일
199601Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor김은규; 손맹호; 이호녕; 김용태; 민석기
199601Study on physical properties of Cu-CVD for ULSI interconnects.김용태; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; 민석기

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