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Issue DateTitleAuthor(s)
200308Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO₂ high-k dielectrics염민수; 심현상; 정형택; 김성일; 김용태
200407Reduction of phase changing voltage in Phase change random access memory by using edge contact structure김용태; 염민수; 심선일; 김성일
200505Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2/Si substrates by sputtering method박유진; 이정용; 염민수; 김용태; 이호성
200611Effects of Bottom Electrode and Environmental Insulator on Thermal Distribution of Edge Contact Type PRAM Cell김용태; 염민수; 성만영
200810Influences of partial melting and overheating on amorphization of Ge2Sb2Te5 during the reset process염민수; 김용태; 성만영
200805Material and electrical properties of Ge-Bi-Te alloy for low power consuming phase-change random access memory김용태; 염민수; 성만영
200806Effects of excess Sb on crystallization of δ-phase SbTe binary thin films염민수; 김용태; 김영환; 성만영
200709Effects of Bottom Electrode and Environmental Insulator on Thermal Distribution of Edge Contact-Type PRAM cell염민수; 김용태; 성만영
200803Effect of nitrogen implantation with low dose on thermomechanical properties and microstructure of Ge2Sb2Te5 films박일목; 정정규; 양태열; 염민수; 김용태; 주영창
200610Surface energy and equilibrium shape of hexagonal structured Ge2Sb2Te5 grain김용태; 박유진; 염민수; 아키히로 와카하라

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