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Issue DateTitleAuthor(s)
200207The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering최훈상; 이종한; 임건식; 강민정; 최인훈; 김용태; 김성일
199909Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure김용태; 신동석; 박영균; 최인훈
199905InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석김제원; 박영균; 김성일; 김용태; 최인훈; 이석헌; 이정희
199905Characteristic absorbance of AlGaN epilayers grown on sapphire substrate김제원; 박영균; 김용태; 최인훈
200106The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2 Si ferroelectric gate oxide structure최훈상; 김은홍; 최인훈; 김용태; 최재형; 이정용
200107A new ferroelectric gate structure for low power operation of non volatile memory devices김용태; 심선일; 김성일; 최훈상; 최인훈; Makoto Ishida
200211Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering임근식; 최훈상; 이종한; 김용태; 김성일; 최인훈
199805Effects of morphological changes of Pt/SrBi//2Ta//2O//9 interface on the electrical properties of ferroelectric capacitor신동석; 이호녕; 김용태; 최인훈
199902Photothermal deflection spectroscopy on InGaN/GaN heterostructures김제원; 박영균; 김용태; 손창식; 최인훈; O. Ambacher; M. Stutzmann
199903Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source김용태; 박영균; 신동석; 최훈상; 최인훈

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