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Issue DateTitleAuthor(s)
199702Characteristics of amorphous Ta-Si-N thin film for Cu metallization김동준; 정순필; 김용태; 민석기; 박종완
199601Formation of circular-shaped crystalline phases embedded in amorphous PbTiO//3 thin films grown by MOCVD.염상섭; 왕채연; 김용태
199501The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.김용태; 민석기; C. S. Kwon; I. H. Choi
199501Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallization김용태; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; 민석기
199912Role of Sb substitution for Bi site in SrBi2Ta2O9 thin film김주형; 이전국; 김용태; 채희권
199401Interface and electrical properties of plasma deposited tungsten nitride schottky contacts to GaAs.김용태; 이창우
199801RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices이창우; 고민경; 오환원; 우상록; 윤성로; 김용태; 박영균; 고석중
199101Highly conductive tungsten thin films prepared by the plasma assised silane reduction process.김용태; 민석기; 홍종성; 김충기
199101플라즈마화학증착 텅스텐박막의 특성에 미치는 H//2/WF//6 입력비의 역활 .김용태; 민석기; 홍종성; 강태원; 홍치유
199101Rapid thermal annealing effects on the properties of plasma-enhanced chemical vapor deposited tungsten films.김용태; 민석기; 홍종성; 강태원; 홍치유

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