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Issue DateTitleAuthor(s)
2016-10Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach김용태; Ki-Sik Im; Chul-Ho Won; Sindhuri Vodapally; Raphael Caulmilone; Sorin Cristoloveanu; Jung-Hee Lee
199905Characteristic absorbance of AlGaN epilayers grown on sapphire substrate김제원; 박영균; 김용태; 최인훈
199902Photothermal deflection spectroscopy on InGaN/GaN heterostructures김제원; 박영균; 김용태; 손창식; 최인훈; O. Ambacher; M. Stutzmann
199907Transmission spectra of InGaN single quantum wells and InGaN/GaN heterostructures grown by metalorganic chemical vapor deposition김제원; 박영균; 김용태; 손창식; 최인훈; O. Ambacher; M. Stutzmann
199901Relative absorption edges of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures by metalorganic chemical vapor deposition김제원; 손창식; 장영근; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann
200305Effects of implantation conditions on the luminescence properties of Eu-doped GaNY. Nakanishi; A. Wakahara; H. Okada; A. Yoshida; T. Ohshima; H. Itoh; S. Nakao; K. Saito; 김용태
201111A study on the optimal design of 600V GaN power MOSFET using Al2O3 gate oxide김용태; 강이구; 장호정
199906Surface morphology and optical properties of epitaxial AlxGa1-xN김제원; 최인훈; 박영균; 김용태
200410Photoluminescence of Er-Implated GaN손창식; 김성일; 김영환; 한일기; 김용태; Akihiro Wakahara; 최인훈; Homero Castaneda Lopez
201209High luminescence efficiency of Eu-doped GaN김성일; Ji-Ho Park; Akihiro Wakahara; 김용태

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