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Issue DateTitleAuthor(s)
199909Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure김용태; 신동석; 박영균; 최인훈
199905InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석김제원; 박영균; 김성일; 김용태; 최인훈; 이석헌; 이정희
199905Characteristic absorbance of AlGaN epilayers grown on sapphire substrate김제원; 박영균; 김용태; 최인훈
199805Effects of morphological changes of Pt/SrBi//2Ta//2O//9 interface on the electrical properties of ferroelectric capacitor신동석; 이호녕; 김용태; 최인훈
199902Photothermal deflection spectroscopy on InGaN/GaN heterostructures김제원; 박영균; 김용태; 손창식; 최인훈; O. Ambacher; M. Stutzmann
199903Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source김용태; 박영균; 신동석; 최훈상; 최인훈
199907Transmission spectra of InGaN single quantum wells and InGaN/GaN heterostructures grown by metalorganic chemical vapor deposition김제원; 박영균; 김용태; 손창식; 최인훈; O. Ambacher; M. Stutzmann
199907Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy김제원; 손창식; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann
199906The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin신동석; 최훈상; 이호녕; 김용태; 박영균; 최인훈
199810Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy김제원; 손창식; 심선일; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann

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