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Issue DateTitleAuthor(s)
200207The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering최훈상; 이종한; 임건식; 강민정; 최인훈; 김용태; 김성일
200106The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2 Si ferroelectric gate oxide structure최훈상; 김은홍; 최인훈; 김용태; 최재형; 이정용
200107A new ferroelectric gate structure for low power operation of non volatile memory devices김용태; 심선일; 김성일; 최훈상; 최인훈; Makoto Ishida
200211Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering임근식; 최훈상; 이종한; 김용태; 김성일; 최인훈
200107Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN김제원; 김성일; 김용태; 김상식; 성만영; 최인훈
200107Crystal structure and electrical properties Pt/SrBi2Ta2O9/ZrO2/Si최훈상; 김은홍; 최인훈; 김용태; 최재형; 이정용
200106Correlation between charge injection and memory window in the ferroelectric gate stack structures이성균; 최인훈; 이철의; 김용태; 김춘근
200112Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure최훈상; 박군상; 허재성; 최인훈; 김용태; 김성일
200007Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient김익수; 최재형; 김용태; 최인훈
200007Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure최훈상; 김용태; 김은홍; 최인훈

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