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Issue DateTitleAuthor(s)
200308Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일
200308Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200307CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기; 이정일; 정지채; 김종민; 이용탁
200305High power broadband InGaAs/GaAs quantum dot superluminescent diodes허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200502Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy최원준; 노희석; 송진동; 이정일; 조용훈
200603Electrical property in InAs/GaAs quantum dot infrared photodetector with hydrogen plasma treatment남형도; 송진동; 최원준; 조운조; 이정일; 최정우; 양해석
200603Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy조남기; 유성필; 송진동; 최원준; 이정일; 전헌수
200308Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200503Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots임재구; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일; T.W. Kim; H S Kim; C G Park

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