Current filters:
Add filters:

Results 1-10 of 22 (Search time: 0.005 seconds).

Item hits:

Issue DateTitleAuthor(s)
199101Active and passive element modeling for MMIC, talking process conditions into account.강광남; 이정일; 한일기; 이유종; 김성일; S. H. Hong
199001Density of states of 2DEG determined from the complex magneto capacitance of a GaAs/AlGaAs heterostructure.김성일; 이정일; B. B. Goldberg; P. J. Stiles
199001RIE 로 처리된 GaAs 표면의 전기적 특성연구 .김성일; 한일기; 최원준; 이정일; 강광남; 조준환; 임한조; 이유종; 이명복
201109Quantum dot-like effect in InGaAs/GaAs quantum well하싸안; 송진동; 최원준; 조남기; 이정일
200502Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy최원준; 송진동; 황성호; 이정일; 김정훈; 송종인; 김은규; A. Chovet
200907Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes조남기; 김광웅; 유성필; 송진동; 최원준; 이정일; 전헌수
201102Arsenic 분압에 따른 GaAs 양자 구조 표면 변화이은혜; 송진동; 김수연; 한일기; 장수경; 이정일
200509Generation of interface states due to quantum dot grown in Au/GaAs Schottky diode structures최원준; 남형도; 이정일; 유병용; 송진동; H. Yang; A. Chovet
200507Distributed Bragg reflector grown with digital-alloy AlGaAs/GaAs for the application to 1.3 ㎛ quantum dot surface emitting laser diodes조남기; 김광웅; 유성필; 송진동; 최원준; 이정일; 전헌수
200907Lasing characteristics of GaAs-based 1300 nm wavelength region InAs quantum dot laser diode김광웅; 조남기; 송진동; 이정일; 박정호; 이유종; 최원준