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Issue DateTitleAuthor(s)
200308Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200912Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses곽호상; 조용훈; 송진동; 최원준; 이정일
200501Electrical and optical characterization of energy states in self-assembled InGa/GaAs quantum dots with size distribution황성호; 이정일; 송진동; 최원준; 한일기; 장수경
201108In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmertic quamtum well하싸안; 송진동; 최원준; 조남기; 이정일
200907Nanometer-scale measurements of electronic states in InAs/GaAs quantum dotsV. D. Dasika; R. S. Goldman; 송진동; 최원준; 조남기; 이정일
200910Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영; 이혜진; 최원준; 송진동; 이정일; 이용탁
200910Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영; 임아람; 최원준; 송진동; 이정일; 이용탁
200907Physical understanding of temperature dependent band gap energies in InAs nanostructures올렉씨; 하싸안; 하승규; 송진동; 최원준; 조남기; 이정일
200911Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formationV. D. Dasika; 송진동; 최원준; 조남기; 이정일; R. S. Goldman
200509Generation of interface states due to quantum dot grown in Au/GaAs Schottky diode structures최원준; 남형도; 이정일; 유병용; 송진동; H. Yang; A. Chovet

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