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Issue DateTitleAuthor(s)
200210Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer한일기; 허두창; 최원준; 이정일
200210Effect of linewidth enhancement factor in the 1.55-㎛ MQW high-power laser diodes한일기; 조시형; 이정일
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200209Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures한일기; 허두창; 최원준; 이정일; 이주인
200706Thermal analysis of InAs quantum dot laser diodes with an additional Au layer on p-metal정정화; 김현재; 김경찬; 이정일; 한일기
200312The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructureHeo, Duchang; 배형철; 이정일; 정지채; 한일기
200811Junction temperature of quantum dot laser diodes depending on the mesa depth정정화; 한일기; 이정일
200808Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method정정화; 김경찬; 이정일; 김현재; 한일기
200312The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200708Comparison of optical gain and α-factor in laser diodes having different quantum dot structures김경찬; 유영채; J. H. Jung; 한일기; 이정일; D. H. Kim; 김태근