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Issue DateTitleAuthor(s)
200308Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200306Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO₂ and SiNx capping films이정호; 최원준; 박용주; 한일기; 이정일; 조운조; 김은규
200603Electrical property in InAs/GaAs quantum dot infrared photodetector with hydrogen plasma treatment남형도; 송진동; 최원준; 조운조; 이정일; 최정우; 양해석
200608Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure정인영; 박영민; 박용주; 이정일; 김태환
200706Thermal analysis of InAs quantum dot laser diodes with an additional Au layer on p-metal정정화; 김현재; 김경찬; 이정일; 한일기
200501Electrical and optical characterization of energy states in self-assembled InGa/GaAs quantum dots with size distribution황성호; 이정일; 송진동; 최원준; 한일기; 장수경
200409Low frequency noise characteristics of GaAs structures with embedded In(Ga)As quantum dots이정일; 유병용; 송진동; 최원준; 남형도; Chovet, Alain
200409Photovoltaic InGaAs quantum dot infrared photodetector with single-sided AlGaAs layer황성호; 신재철; 최원준; 송진동; 이정일; 한해욱; 이승웅
200409Characteristics of QDIP (quantum dot infrared photo-detector) with post-growth treatments최원준; 황성호; 송진동; 이정일
200409High power laser diodes/superluminescent diodes허두창; 한일기; 송진동; 박용주; 최원준; 조운조; 이정일