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Issue DateTitleAuthor(s)
199201Study of charge trapping instabilities in Si//xN/InP MIS structure by constant capacitance method.강광남; 이정일; C. H. Kim; 한일기; C. Choe; H. Lim
199301Deposition temperature dependence of electrical instability in InP MIS provided by PECVD silicon nitride.강광남; 이정일; 한일기; M. B. Lee; Y. J. Lee; H. Lim
199401Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP.강광남; 이정일; 한일기; J. Her; H. Lim; C. H. Kim; J. E. Kim; H. Y. Park
199401Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapor deposition.강광남; 이정일; 한일기; C. H. Kim; S. D. Kwon; B. Choe; H. L. Park; J. Her; H. Lim
199301Study on the low-field charge-trapping phenomena in the silicon-nitride/InP structure.강광남; 이정일; 한일기; C. H. Kim; S. D. Kwon; B. D. Choe; J. Her; H. Lim
199301A simple model for second substrate current hump in short channel LDD MOSFET.강광남; 이정일; M. B. Lee; Y. Kim; K. S. Yoon; H. Lim; K. Y. Lim
199301A simple model for second substrate current hump in short channel LDD MOSFET.강광남; 이정일; M. B. Lee; K. S. Yoon; K. Y. Lim; H. Lim
199201Interface constraints in InP MIS structures.강광남; 이정일; C. H. Kim; Byungdoo Choe; H. Lim
199610Instability of anodically sulfur-treated InP.김은규; 민석기; 우덕하; 한일기; 이정일; 강광남; H. J. Kim; S. H. Kim; H. Lim; H. L. Park
199301Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitride.강광남; 이정일; 한일기; C. H. Kim; B. Choe; H. L. Park; H. Lim

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