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Issue DateTitleAuthor(s)
200502Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy최원준; 송진동; 황성호; 이정일; 김정훈; 송종인; 김은규; A. Chovet
200502Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용
200707Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode유성필; Y. T. Lee; 조남기; 최원준; 송진동; 이정일; H. S. Kwack; Y. H. Cho
200708Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: Vertical realignment of weakly coupled quantum dotsHo-Sang Kwack; Byoung-O Kim; Yong-Hoon Cho; 송진동; 최원준; 이정일
200607Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots이정일; 남형도; 최원준; 유병용; 송진동; S.C. Hong; S.K. Noh; A. Chovet
200308Enhancement of optical properties of self-assembled quantum dots for infra-red photo-detectors by thermal annealing황성호; 신재철; 송진동; 최원준; 박용주; 한일기; 조운조; 이정일; Haewook Han
200604Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources송진동; 최원준; 이정일; 김종민; 장기수; 이용탁
200604Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication송진동; 최원준; 이정일; 이정용
200709Comparisons of lasing characteristics of InGaAs quantum-dot and quantum well laser diodes정경욱; 김광웅; 유성필; 조남기; 박성준; 송진동; 최원준; 이정일; 양해석
200304원자층성장된 InGaAs/GaAs 양자점의 광학 및 구조적 특성과 반도체레이저다이오드의 응용송진동; 허두창; 신재철; 박영민; 임재구; 최원준; 한일기; 박용주; 조운조; 이정일; 이호성; 이정용