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Issue DateTitleAuthor(s)
201604All-electric spin transistor using perpendicular spins김지훈; 배주형; 민병철; 김형준; 장준연; 구현철
2016-10Spin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four- terminal methods한석희; 장준연; 구현철; 김형준; 박태언; 박윤호; 남송현; Hae-In Ihm
201012Influence of the Magnetic Field on the Effective Mass and the Rashba effect in an In0.53Ga0.47As Quantum-well Structure박윤호; 구현철; 김경호; 김형준; 장준연; 한석희
201312Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates신재균; 김경호; 엄두승; 이호찬; 임성동; 장준연; 구현철; 오민욱; 고현협; 김형준
201208Single Crystalline β-Ag2Te Nanowire as a New Topological InsulatorSunghun Lee; Juneho In; Youngdong Yoo; Younghun Jo; Yun Chang Park; 김형준; 구현철; Jinhee Kim; Bongsoo Kim; Kang L. Wang
201306Spin transport in transferred In0.53Ga0.47As channels onto Si substrates양윤석; 고현협; 구현철; 장준연; 김형준
201310Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates김경호; 엄두승; 이호찬; 임선동; 장준연; 구현철; 오민욱; 고현협; 김형준
201011Detection of Rashba field using a rotational applied field장현철; 박윤호; 구현철; 김형준; 장준연; 김희중
201312Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements박윤호; 김형준; 장준연; 한석희; 엄종화; 최헌진; 구현철
201409Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates양윤석; 엄두승; 이영수; 신재균; 장준연; 구현철; 고현협; 김형준

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