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Issue DateTitleAuthor(s)
200111Linearized multiple quantum well electro-absorption modulator by quantum well intermixing technique최원준; Woon Sik Kim; 한일기; 박용주; 김은규; 이정일; Jong Chang Yi
200103Size control of InAs quantum dots on 2˚-off GaAs(100) substrate by the thickness of GaAs buffer layer김효진; 박용주; 김은규; 김태환
200108Effects of GaN buffer layer thickness on characteristics of GaN epilayer조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진
200109Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation이호선; S.M. Kim; 박용주; 김은규
200107Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs나종범; 박승한; 김광무; 박용주; 현찬경; 김은규
200106Defect generation in multi-stacked InAs quantum dot/GaAs structures노정현; 박용주; 김광무; 박영민; 김은규; 심광보
200111Implantation of N-ion on sapphire substrate for GaN epilayer박용주; Yong Suk Cho; Eui Kwan Koh; 김은규; Gyeungho Kim; Dongjin Byun; Suk-Ki Min
200105The synthesis and characterization of GaN micro-crystals노정현; 박용주; 김은규; 심광보
200106Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures김민기; 윤주환; 유종훈; 조신호; 박용주; 김은규
200104Dependence of buffer layer on the distribution of InAs quantum dots김효진; 박용주; 민병돈; 현찬경; 박세기; 김은규; 김태환