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Issue DateTitleAuthor(s)
200308Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일
200308Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200307CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기; 이정일; 정지채; 김종민; 이용탁
200305Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots이창윤; 송진동; 이용탁; 김태완
200305High power broadband InGaAs/GaAs quantum dot superluminescent diodes허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200302Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topographyP. Offermans; P. M. Koenraad; J. H. Wolter; 송진동; 김종민; 배성주; 이용탁
200302Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering유재수; 송진동; 이용탁; 임한조
200308Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200312Optical Properties of Quantum-Wires Grown Using Lateral Composition Modulation Induced by (InP)1/(GaP)1 Short-Period Superlattices송진동; 김종민; 이용탁

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