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Issue DateTitleAuthor(s)
200302Spectral response change in a quantum well infrared photodetector by using quantum well intermixing신재철; 최원준; 한일기; 박용주; 이정일; H.J. Kim; 최정우; 김은규
200306Spectral response modification of quantum well infrared photodetector by quantum well intermixing.신재철; 최원준; 한일기; 박용주; 이정일; 김은규; H.J. Kim; 최정우
200308Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200312Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경
200310Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique김지훈; 박용주; 박영민; 송진동; 신재철; 이정일; 김태환
200306Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO₂ capping layer황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 최정우
200310Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200308Enhancement of optical properties of self-assembled quantum dots for infra-red photo-detectors by thermal annealing황성호; 신재철; 송진동; 최원준; 박용주; 한일기; 조운조; 이정일; Haewook Han
200308Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호
200304원자층성장된 InGaAs/GaAs 양자점의 광학 및 구조적 특성과 반도체레이저다이오드의 응용송진동; 허두창; 신재철; 박영민; 임재구; 최원준; 한일기; 박용주; 조운조; 이정일; 이호성; 이정용

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