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Issue DateTitleAuthor(s)
200308Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일
200308Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200307CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기; 이정일; 정지채; 김종민; 이용탁
200305High power broadband InGaAs/GaAs quantum dot superluminescent diodes허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200308Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
200312Improvment of the high-temperature characteristics of 1.52 ㎛ InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriers허두창; 송진동; 최원준; 이정일; 이용탁; 정지채; 한일기
200312The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200312Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경
200310Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique김지훈; 박용주; 박영민; 송진동; 신재철; 이정일; 김태환

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