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Issue DateTitleAuthor(s)
200304Effects of the linewidth enhancement factor on filamentation in 1.55 μm broad-area laser diodes허두창; 한일기; 이정일; 정지채; 조시형
200308Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200307CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기; 이정일; 정지채; 김종민; 이용탁
200305High power broadband InGaAs/GaAs quantum dot superluminescent diodes허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200312The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructureHeo, Duchang; 배형철; 이정일; 정지채; 한일기
200312Improvment of the high-temperature characteristics of 1.52 ㎛ InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriers허두창; 송진동; 최원준; 이정일; 이용탁; 정지채; 한일기
200312The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200309High performance of 1.54㎛ InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells허두창; 한일기; 이정일; 정지채
200309Maximum power CW 2.45-W 1.55-㎛ InGaAsP laterally tapered laser diodes.허두창; 한일기; 이정일; 정지채

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