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Issue DateTitleAuthor(s)
200011Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots박세기; 박용주; 박영민; 김효진; 김은규; 이천
200011Control of semiconductor nano-structures for quantum devices김은규; 김효진; 김광무; 박영민; 박용주
200102Effect of Si doping on InAs/GaAs quantum dots조광식; 윤석호; 황희돈; 윤의준; 박영민; 박용주; 김은규; 임영수; 이정용
200410Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경
200407A micro-photoluminescence study of vertically stacked InAs-GaAs double-layer quantum dotsYoung Chul Choi; Tae Geun Kim; 박영민; 박용주
200409Carrier dynamics in the coupled structure of InGaAs quantum dots in a well박영민; Keon-Ho Yoo; 박용주; 김광무; 송진동; 이정일
200411Effects of Si-doped GaAs layer on optical properties of InAs quantum dots박영민; 박용주; 김광무; 이정일; 유건호
200401Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호
200304원자층성장된 InGaAs/GaAs 양자점의 광학 및 구조적 특성과 반도체레이저다이오드의 응용송진동; 허두창; 신재철; 박영민; 임재구; 최원준; 한일기; 박용주; 조운조; 이정일; 이호성; 이정용
200305Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes송진동; 박영민; 신재철; 허두창; 배형철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경

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