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Issue DateTitleAuthor(s)
200011Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots박세기; 박용주; 박영민; 김효진; 김은규; 이천
200008Selective formation of InAs self-assembled quantum dots on AFM-patterned GaAs현찬경; 박용주; 김은규; 최승철; 송상헌; 황성우; 민병돈; 안도열
200112Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dotsS.K.Park; 박용주; Y.M.Park; H.J.Kim; E.K.Kim; C.Lee
200206Effects of doping profile on characteristics of InAs quantum dotsYoung Min Park; 박용주; Kwang Moo Kim; Jae Cheol Shin; Eun Kyu Kim; Maeng Ho Son; Sung Woo Hwang; Keon-Ho Yoo
200011Control of semiconductor nano-structures for quantum devices김은규; 김효진; 김광무; 박영민; 박용주
200011Selective formation of semiconductor quantum dots for device applications김은규; 박용주; 손맹호; 김용
200106Study of inserting layer on characteristics of InxGa1-xAs/GaAs quantum dots김은규; 박세기; 박용주
200102Effect of Si doping on InAs/GaAs quantum dots조광식; 윤석호; 황희돈; 윤의준; 박영민; 박용주; 김은규; 임영수; 이정용
200412Coupling effect between InAs Quantum dots and electric field-induced quantum dot김재호; 정재헌; 곽계달; 김태환; 박용주
200410Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경

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