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Issue DateTitleAuthor(s)
200307Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy허두창; 한일기; 송진동; 최원준; 이정일; 이정용; 이주인; 정지채
200305High power broadband InGaAs/GaAs quantum dot superluminescent diodes허두창; 송진동; 최원준; 이정일; 정지채; 한일기
200912Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses곽호상; 조용훈; 송진동; 최원준; 이정일
200409Strain-sensitive size modulation in ZnSe/ZnS quantum dots grown on GaAs substratesY. G. Kim; Y. S. Joh; 송정훈; E. D. Sim; K. S. Baek; 장수경; 이정일
200811Junction temperature of quantum dot laser diodes depending on the mesa depth정정화; 한일기; 이정일
200410Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경
2005031/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots송진동; 최원준; 한일기; 조운조; 이정일; 유병용; 변종홍; 김정훈; 송종인; Chovet, Alain
200907Growth of low density InGaAs quantum dots using MEMBE조남기; 박성준; 송진동; 최원준; 이정일
201108In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmertic quamtum well하싸안; 송진동; 최원준; 조남기; 이정일
200502Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용

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